QS8M12TCR

MOSFET N/P-CH 30V 4A TSMT8
QS8M12TCR P1
QS8M12TCR P1
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Rohm Semiconductor ~ QS8M12TCR

Part Number
QS8M12TCR
Manufacturer
Rohm Semiconductor
Description
MOSFET N/P-CH 30V 4A TSMT8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
QS8M12TCR.pdf QS8M12TCR PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number QS8M12TCR
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 42 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 10V
Power - Max 1.5W
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package TSMT8

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