Images are for reference only.
See Product Specifications for product details.
| Part Number | BSM180C12P2E202 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | +22V, -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 20000pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1360W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | Module |
| Package / Case | Module |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
BSM180C12P2E202 | Rohm Semiconductor | BSM180C12P2E202 IS A SIC SILICO | - | 116 | Details |
 |
BSM180D12P2C101 | Rohm Semiconductor | MOSFET 2N-CH 1200V 180A MODULE | 34 | Details | |
|
BSM180D12P3C007 | Rohm Semiconductor | SIC POWER MODULE | - | 11 | Details |