BSM180D12P2C101

MOSFET 2N-CH 1200V 180A MODULE
BSM180D12P2C101 P1
BSM180D12P2C101 P1
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Rohm Semiconductor ~ BSM180D12P2C101

Part Number
BSM180D12P2C101
Manufacturer
Rohm Semiconductor
Description
MOSFET 2N-CH 1200V 180A MODULE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
BSM180D12P2C101.pdf BSM180D12P2C101 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 34 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number BSM180D12P2C101
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 180A
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 10V
Power - Max 1130W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type -
Package / Case Module
Supplier Device Package Module

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