PHD38N02LT,118

MOSFET N-CH 20V 44.7A DPAK
PHD38N02LT,118 P1
PHD38N02LT,118 P1
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Nexperia USA Inc. ~ PHD38N02LT,118

Part Number
PHD38N02LT,118
Manufacturer
Nexperia USA Inc.
Description
MOSFET N-CH 20V 44.7A DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
PHD38N02LT,118.pdf PHD38N02LT,118 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number PHD38N02LT,118
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 44.7A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 20V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 57.6W (Tc)
Rds On (Max) @ Id, Vgs 16 mOhm @ 25A, 5V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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