Images are for reference only.
See Product Specifications for product details.
| Part Number | APT68GA60B |
|---|---|
| Part Status | Active |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 121A |
| Current - Collector Pulsed (Icm) | 202A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Power - Max | 520W |
| Switching Energy | 715µJ (on), 607µJ (off) |
| Input Type | Standard |
| Gate Charge | 298nC |
| Td (on/off) @ 25°C | 21ns/133ns |
| Test Condition | 400V, 40A, 4.7 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
APT6010B2LLG | Microsemi Corporation | MOSFET N-CH 600V 54A T-MAX | - | 4 | Details |
 |
APT6013JLL | Microsemi Corporation | MOSFET N-CH 600V 39A SOT-227 | - | 2 | Details |
 |
APT6013LLLG | Microsemi Corporation | MOSFET N-CH 600V 43A TO-264 | - | 3 | Details |
 |
APT6017B2LLG | Microsemi Corporation | MOSFET N-CH 600V 35A T-MAX | - | 15579 | Details |
 |
APT6017LFLLG | Microsemi Corporation | MOSFET N-CH 600V 35A TO-264 | - | 15 | Details |
 |
APT6017LLLG | Microsemi Corporation | MOSFET N-CH 600V 35A TO-264 | - | 25 | Details |
 |
APT6030BN | Microsemi Corporation | MOSFET N-CH 600V 23A TO247AD | 0 | Details | |
|
APT6040BN | Microsemi Corporation | MOSFET N-CH 600V 18A TO247AD | 0 | Details | |
|
APT6040BNG | Microsemi Corporation | MOSFET N-CH 600V 18A TO247AD | 0 | Details | |
 |
APT60D100BG | Microsemi Corporation | DIODE GEN PURP 1KV 60A TO247 | - | 375 | Details |
 |
APT60D100LCTG | Microsemi Corporation | DIODE ARRAY GP 1000V 60A TO264 | - | 0 | Details |
 |
APT60D100SG | Microsemi Corporation | DIODE GEN PURP 1KV 60A D3 | - | 0 | Details |