Images are for reference only.
See Product Specifications for product details.
| Part Number | APT60D100SG |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000V |
| Current - Average Rectified (Io) | 60A |
| Voltage - Forward (Vf) (Max) @ If | 2.5V @ 60A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 280ns |
| Current - Reverse Leakage @ Vr | 250µA @ 1000V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package | D3 [S] |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
APT6010B2LLG | Microsemi Corporation | MOSFET N-CH 600V 54A T-MAX | - | 4 | Details |
 |
APT6013JLL | Microsemi Corporation | MOSFET N-CH 600V 39A SOT-227 | - | 2 | Details |
 |
APT6013LLLG | Microsemi Corporation | MOSFET N-CH 600V 43A TO-264 | - | 3 | Details |
 |
APT6017B2LLG | Microsemi Corporation | MOSFET N-CH 600V 35A T-MAX | - | 15579 | Details |
 |
APT6017LFLLG | Microsemi Corporation | MOSFET N-CH 600V 35A TO-264 | - | 15 | Details |
 |
APT6017LLLG | Microsemi Corporation | MOSFET N-CH 600V 35A TO-264 | - | 25 | Details |
 |
APT6030BN | Microsemi Corporation | MOSFET N-CH 600V 23A TO247AD | 0 | Details | |
|
APT6040BN | Microsemi Corporation | MOSFET N-CH 600V 18A TO247AD | 0 | Details | |
|
APT6040BNG | Microsemi Corporation | MOSFET N-CH 600V 18A TO247AD | 0 | Details | |
 |
APT60D100BG | Microsemi Corporation | DIODE GEN PURP 1KV 60A TO247 | - | 375 | Details |
 |
APT60D100LCTG | Microsemi Corporation | DIODE ARRAY GP 1000V 60A TO264 | - | 0 | Details |
 |
APT60D100SG | Microsemi Corporation | DIODE GEN PURP 1KV 60A D3 | - | 0 | Details |