Images are for reference only.
See Product Specifications for product details.
| Part Number | APT102GA60L |
|---|---|
| Part Status | Active |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 183A |
| Current - Collector Pulsed (Icm) | 307A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 62A |
| Power - Max | 780W |
| Switching Energy | 1.354mJ (on), 1.614mJ (off) |
| Input Type | Standard |
| Gate Charge | 294nC |
| Td (on/off) @ 25°C | 28ns/212ns |
| Test Condition | 400V, 62A, 4.7 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Supplier Device Package | TO-264 [L] |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
APT1001R1BN | Microsemi Corporation | MOSFET N-CH 1KV 10.5A TO247AD | 0 | Details | |
|
APT1001RBN | Microsemi Corporation | MOSFET N-CH 1KV 11A TO247AD | 0 | Details | |
 |
APT10021JFLL | Microsemi Corporation | MOSFET N-CH 1000V 37A SOT-227 | - | 0 | Details |
 |
APT10021JLL | Microsemi Corporation | MOSFET N-CH 1000V 37A SOT-227 | - | 14 | Details |
|
APT1002RBNG | Microsemi Corporation | MOSFET N-CH 1KV 8A TO247AD | - | 0 | Details |
 |
APT10035B2FLLG | Microsemi Corporation | MOSFET N-CH 1000V 28A T-MAX | - | 3 | Details |
 |
APT10035B2LLG | Microsemi Corporation | MOSFET N-CH 1000V 28A T-MAX | - | 0 | Details |
 |
APT10035JLL | Microsemi Corporation | MOSFET N-CH 1000V 25A SOT-227 | - | 0 | Details |
 |
APT10035LLLG | Microsemi Corporation | MOSFET N-CH 1000V 28A TO-264 | - | 7 | Details |
 |
APT1003RBLLG | Microsemi Corporation | MOSFET N-CH 1000V 4A TO-247 | - | 30 | Details |
 |
APT1003RKLLG | Microsemi Corporation | MOSFET N-CH 1000V 4A TO-220 | 0 | Details | |
 |
APT10045B2LLG | Microsemi Corporation | MOSFET N-CH 1000V 23A T-MAX | - | 6 | Details |