SI4413DDY-T1-GE3

MOSFET P-CHANNEL 8SOIC
SI4413DDY-T1-GE3 P1
SI4413DDY-T1-GE3 P1
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Vishay Siliconix ~ SI4413DDY-T1-GE3

Part Number
SI4413DDY-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET P-CHANNEL 8SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI4413DDY-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 63926 pcs
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Product Parameter

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Part Number SI4413DDY-T1-GE3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) -
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 4780pF @ 15V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 125°C
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)

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