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FDN338P_G

INTEGRATED CIRCUIT
Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › FDN338P_G
FDN338P_G P1
FDN338P_G P1
Images are for reference only.
See Product Specifications for product details.

ON Semiconductor ~ FDN338P_G

Part Number
FDN338P_G
Manufacturer
ON Semiconductor
Description
INTEGRATED CIRCUIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FDN338P_G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 11248 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number FDN338P_G
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 115 mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 451pF @ 10V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT-3
Package / Case TO-236-3, SC-59, SOT-23-3

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