IDB30E60ATMA1

DIODE GEN PURP 600V 52.3A TO263
IDB30E60ATMA1 P1
IDB30E60ATMA1 P1
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Infineon Technologies ~ IDB30E60ATMA1

Part Number
IDB30E60ATMA1
Manufacturer
Infineon Technologies
Description
DIODE GEN PURP 600V 52.3A TO263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IDB30E60ATMA1 PDF online browsing
Family
Diodes - Rectifiers - Single
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Product Parameter

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Part Number IDB30E60ATMA1
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 52.3A (DC)
Voltage - Forward (Vf) (Max) @ If 2V @ 30A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 126ns
Current - Reverse Leakage @ Vr 50µA @ 600V
Capacitance @ Vr, F -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
Operating Temperature - Junction -40°C ~ 175°C

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