GA100JT12-227

TRANS SJT 1200V 160A SOT227
GA100JT12-227 P1
GA100JT12-227 P1
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GeneSiC Semiconductor ~ GA100JT12-227

Part Number
GA100JT12-227
Manufacturer
GeneSiC Semiconductor
Description
TRANS SJT 1200V 160A SOT227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
GA100JT12-227.pdf GA100JT12-227 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 80 pcs
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Product Parameter

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Part Number GA100JT12-227
Part Status Active
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 160A
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 800V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 535W (Tc)
Rds On (Max) @ Id, Vgs 10 mOhm @ 100A
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227
Package / Case SOT-227-4, miniBLOC

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