TPN2R304PL,L1Q

MOSFET N-CH 40V 80A TSON
TPN2R304PL,L1Q P1
TPN2R304PL,L1Q P1
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Toshiba Semiconductor and Storage ~ TPN2R304PL,L1Q

Part Number
TPN2R304PL,L1Q
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 40V 80A TSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TPN2R304PL,L1Q PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number TPN2R304PL,L1Q
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.4V @ 0.3mA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 20V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs 2.3 mOhm @ 40A, 10V
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN

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