Images are for reference only.
See Product Specifications for product details.
| Part Number | TPC6113(TE85L,F,M) |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 690pF @ 10V |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 2.5A, 4.5V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
TPC6110(TE85L,F,M) | Toshiba Semiconductor and Storage | MOSFET P-CH 30V 4.5A VS6 | - | 0 | Details |
 |
TPC6111(TE85L,F,M) | Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.5A VS-6 | - | 0 | Details |
 |
TPC6113(TE85L,F,M) | Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5A VS6 | - | 0 | Details |