TK16N60W,S1VF

MOSFET N CH 600V 15.8A TO247
TK16N60W,S1VF P1
TK16N60W,S1VF P1
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Toshiba Semiconductor and Storage ~ TK16N60W,S1VF

Part Number
TK16N60W,S1VF
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N CH 600V 15.8A TO247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TK16N60W,S1VF PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 90 pcs
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Product Parameter

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Part Number TK16N60W,S1VF
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 15.8A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 300V
Vgs (Max) ±30V
FET Feature Super Junction
Power Dissipation (Max) 130W (Tc)
Rds On (Max) @ Id, Vgs 190 mOhm @ 7.9A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3

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