IPI80CN10N G

MOSFET N-CH 100V 13A TO262-3
IPI80CN10N G P1
IPI80CN10N G P2
IPI80CN10N G P3
IPI80CN10N G P1
IPI80CN10N G P2
IPI80CN10N G P3
Images are for reference only.
See Product Specifications for product details.

Infineon Technologies ~ IPI80CN10N G

Part Number
IPI80CN10N G
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 100V 13A TO262-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPI80CN10N G.pdf IPI80CN10N G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 0 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number IPI80CN10N G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 716pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 31W (Tc)
Rds On (Max) @ Id, Vgs 80 mOhm @ 13A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

Related Products

All Products