IPI80N03S4L04AKSA1

MOSFET N-CH 30V 80A TO262-3
IPI80N03S4L04AKSA1 P1
IPI80N03S4L04AKSA1 P2
IPI80N03S4L04AKSA1 P3
IPI80N03S4L04AKSA1 P1
IPI80N03S4L04AKSA1 P2
IPI80N03S4L04AKSA1 P3
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Infineon Technologies ~ IPI80N03S4L04AKSA1

Part Number
IPI80N03S4L04AKSA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 30V 80A TO262-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IPI80N03S4L04AKSA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPI80N03S4L04AKSA1
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.2V @ 45µA
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V
Vgs (Max) ±16V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Rds On (Max) @ Id, Vgs 3.7 mOhm @ 80A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

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