IPB50R140CPATMA1

MOSFET N-CH 550V 23A TO-263
IPB50R140CPATMA1 P1
IPB50R140CPATMA1 P1
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Infineon Technologies ~ IPB50R140CPATMA1

Part Number
IPB50R140CPATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 550V 23A TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IPB50R140CPATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 26587 pcs
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Product Parameter

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Part Number IPB50R140CPATMA1
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 140 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 3.5V @ 930µA
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2540pF @ 100V
FET Feature -
Power Dissipation (Max) 192W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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