IPAN60R650CEXKSA1

MOSFET NCH 600V 9.9A TO220
IPAN60R650CEXKSA1 P1
IPAN60R650CEXKSA1 P1
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Infineon Technologies ~ IPAN60R650CEXKSA1

Part Number
IPAN60R650CEXKSA1
Manufacturer
Infineon Technologies
Description
MOSFET NCH 600V 9.9A TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPAN60R650CEXKSA1.pdf IPAN60R650CEXKSA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 973 pcs
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Product Parameter

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Part Number IPAN60R650CEXKSA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 9.9A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
Vgs (Max) ±20V
FET Feature Super Junction
Power Dissipation (Max) 28W (Tc)
Rds On (Max) @ Id, Vgs 650 mOhm @ 2.4A, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type -
Supplier Device Package PG-TO220 Full Pack
Package / Case TO-220-3 Full Pack

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