VS-FC80NA20

MOSFET N-CH 200V 108A
VS-FC80NA20 P1
VS-FC80NA20 P1
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Vishay Semiconductor Diodes Division ~ VS-FC80NA20

Part Number
VS-FC80NA20
Manufacturer
Vishay Semiconductor Diodes Division
Description
MOSFET N-CH 200V 108A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- VS-FC80NA20 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number VS-FC80NA20
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 108A
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 161nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 10720pF @ 50V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 405W (Tc)
Rds On (Max) @ Id, Vgs 14 mOhm @ 80A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type -
Supplier Device Package SOT-227
Package / Case SOT-227-4, miniBLOC

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