VS-FB180SA10P

MOSFET N-CH 100V 180A SOT-227
VS-FB180SA10P P1
VS-FB180SA10P P1
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Vishay Semiconductor Diodes Division ~ VS-FB180SA10P

Part Number
VS-FB180SA10P
Manufacturer
Vishay Semiconductor Diodes Division
Description
MOSFET N-CH 100V 180A SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
VS-FB180SA10P.pdf VS-FB180SA10P PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number VS-FB180SA10P
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 10700pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 480W (Tc)
Rds On (Max) @ Id, Vgs 6.5 mOhm @ 180A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227
Package / Case SOT-227-4

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