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See Product Specifications for product details.
Part Number | SIA439EDJ-T1-GE3 |
---|---|
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 69nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
Rds On (Max) @ Id, Vgs | 16.5 mOhm @ 5A, 4.5V |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SC-70-6 Single |
Package / Case | PowerPAK® SC-70-6 |