SI8481DB-T1-E1

MOSFET P-CH 20V 9.7A 4-MICROFOOT
SI8481DB-T1-E1 P1
SI8481DB-T1-E1 P1
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Vishay Siliconix ~ SI8481DB-T1-E1

Part Number
SI8481DB-T1-E1
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 20V 9.7A 4-MICROFOOT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI8481DB-T1-E1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SI8481DB-T1-E1
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9.7A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 10V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 2.8W (Tc)
Rds On (Max) @ Id, Vgs 21 mOhm @ 3A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-MICRO FOOT® (1.6x1.6)
Package / Case 4-UFBGA

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