SI6467BDQ-T1-E3

MOSFET P-CH 12V 6.8A 8-TSSOP
SI6467BDQ-T1-E3 P1
SI6467BDQ-T1-E3 P1
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Vishay Siliconix ~ SI6467BDQ-T1-E3

Part Number
SI6467BDQ-T1-E3
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 12V 6.8A 8-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI6467BDQ-T1-E3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SI6467BDQ-T1-E3
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 850mV @ 450µA
Gate Charge (Qg) (Max) @ Vgs 70nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 1.05W (Ta)
Rds On (Max) @ Id, Vgs 12.5 mOhm @ 8A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)

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