TPCF8104(TE85L,F,M

MOSFET P-CH 30V 6A VS-8
TPCF8104(TE85L,F,M P1
TPCF8104(TE85L,F,M P2
TPCF8104(TE85L,F,M P3
TPCF8104(TE85L,F,M P1
TPCF8104(TE85L,F,M P2
TPCF8104(TE85L,F,M P3
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Toshiba Semiconductor and Storage ~ TPCF8104(TE85L,F,M

Part Number
TPCF8104(TE85L,F,M
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET P-CH 30V 6A VS-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
TPCF8104(TE85L,F,M.pdf TPCF8104(TE85L,F,M PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number TPCF8104(TE85L,F,M
Part Status Discontinued at Digi-Key
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1760pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Rds On (Max) @ Id, Vgs 28 mOhm @ 3A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package VS-8 (2.9x1.5)
Package / Case 8-SMD, Flat Lead

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