Images are for reference only.
See Product Specifications for product details.
| Part Number | TK31V60X,LQ |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V |
| Vgs (Max) | ±30V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 240W (Tc) |
| Rds On (Max) @ Id, Vgs | 98 mOhm @ 9.4A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (8x8) |
| Package / Case | 4-VSFN Exposed Pad |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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TK31A60W,S4VX | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-220SIS | - | 0 | Details |
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TK31E60W,S1VX | Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A TO-220 | - | 0 | Details |
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TK31E60X,S1X | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-220 | - | 95 | Details |
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TK31J60W,S1VQ | Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A TO-3P(N) | - | 47 | Details |
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TK31J60W5,S1VQ | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-3P(N) | - | 0 | Details |
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TK31N60W,S1VF | Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A TO247 | - | 95 | Details |
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TK31N60W5,S1VF | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-247 | - | 240 | Details |
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TK31N60X,S1F | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-247 | - | 294 | Details |
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TK31V60W,LVQ | Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A 5DFN | - | 0 | Details |
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TK31V60W5,LVQ | Toshiba Semiconductor and Storage | MOSFET N -CH 600V 30.8A DFN | - | 2500 | Details |
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TK31V60X,LQ | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A 5DFN | - | 2500 | Details |