Images are for reference only.
See Product Specifications for product details.
| Part Number | TK28N65W,S1F |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 27.6A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.6mA |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 13.8A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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TK28A65W,S5X | Toshiba Semiconductor and Storage | MOSFET N-CH 650V 27.6A TO-220SIS | - | 230 | Details |
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TK28N65W,S1F | Toshiba Semiconductor and Storage | MOSFET N-CH 650V 27.6A TO247 | - | 130 | Details |