TK12V60W,LVQ

MOSFET N CH 600V 11.5A 5DFN
TK12V60W,LVQ P1
TK12V60W,LVQ P2
TK12V60W,LVQ P1
TK12V60W,LVQ P2
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Toshiba Semiconductor and Storage ~ TK12V60W,LVQ

Part Number
TK12V60W,LVQ
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N CH 600V 11.5A 5DFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TK12V60W,LVQ PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number TK12V60W,LVQ
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 300V
Vgs (Max) ±30V
FET Feature Super Junction
Power Dissipation (Max) 104W (Tc)
Rds On (Max) @ Id, Vgs 300 mOhm @ 5.8A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (8x8)
Package / Case 4-VSFN Exposed Pad

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