FQPF5N60C_F105

INTEGRATED CIRCUIT
FQPF5N60C_F105 P1
FQPF5N60C_F105 P1
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ON Semiconductor ~ FQPF5N60C_F105

Part Number
FQPF5N60C_F105
Manufacturer
ON Semiconductor
Description
INTEGRATED CIRCUIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FQPF5N60C_F105 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 7077 pcs
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Product Parameter

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Part Number FQPF5N60C_F105
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5 Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V
FET Feature -
Power Dissipation (Max) 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack

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