FQPF55N10

MOSFET N-CH 100V 34.2A TO-220F
FQPF55N10 P1
FQPF55N10 P1
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Fairchild/ON Semiconductor ~ FQPF55N10

Part Number
FQPF55N10
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 100V 34.2A TO-220F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
FQPF55N10.pdf FQPF55N10 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number FQPF55N10
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 34.2A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2730pF @ 25V
Vgs (Max) ±25V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Rds On (Max) @ Id, Vgs 26 mOhm @ 17.1A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack

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