Images are for reference only.
See Product Specifications for product details.
| Part Number | 2SK3666-4-TB-E |
|---|---|
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2.5mA @ 10V |
| Current Drain (Id) - Max | 10mA |
| Voltage - Cutoff (VGS off) @ Id | 180mV @ 1µA |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
| Resistance - RDS(On) | 200 Ohm |
| Power - Max | 200mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | 3-CP |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
2SK3662(F) | Toshiba Semiconductor and Storage | MOSFET N-CH 60V 35A TO220NIS | 0 | Details | |
 |
2SK3666-2-TB-E | ON Semiconductor | JFET NCH 30V 200MW 3CP | - | 3000 | Details |
 |
2SK3666-3-TB-E | ON Semiconductor | JFET N-CH 10MA 200MW 3CP | - | 12000 | Details |
 |
2SK3666-4-TB-E | ON Semiconductor | JFET N-CH 30V 0.2W CP | 0 | Details | |
 |
2SK3670(F,M) | Toshiba Semiconductor and Storage | MOSFET N-CH | 0 | Details | |
 |
2SK3670(T6CANO,A,F | Toshiba Semiconductor and Storage | MOSFET N-CH | 0 | Details | |
 |
2SK3670(T6CANO,F,M | Toshiba Semiconductor and Storage | MOSFET N-CH | 0 | Details | |
 |
2SK3670,F(J | Toshiba Semiconductor and Storage | MOSFET N-CH | 0 | Details | |
 |
2SK3670,F(M | Toshiba Semiconductor and Storage | MOSFET N-CH | 0 | Details |