MDS1100

TRANS RF BIPO 8750W 100A 55TU1
MDS1100 P1
MDS1100 P1
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Microsemi Corporation ~ MDS1100

Part Number
MDS1100
Manufacturer
Microsemi Corporation
Description
TRANS RF BIPO 8750W 100A 55TU1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- MDS1100 PDF online browsing
Family
Transistors - Bipolar (BJT) - RF
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Product Parameter

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Part Number MDS1100
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 65V
Frequency - Transition 1.03GHz
Noise Figure (dB Typ @ f) -
Gain 8.9dB
Power - Max 8750W
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A, 5V
Current - Collector (Ic) (Max) 100A
Operating Temperature 200°C (TJ)
Mounting Type Surface Mount
Package / Case 55TU-1
Supplier Device Package 55TU-1

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