Images are for reference only.
See Product Specifications for product details.
| Part Number | APTML20UM18R010T1AG |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 109A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 9880pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Rds On (Max) @ Id, Vgs | 19 mOhm @ 50A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SP1 |
| Package / Case | SP1 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
APTML202UM18R010T3AG | Microsemi Corporation | MOSFET 2N-CH 200V 109A SP3 | - | 0 | Details |
|
APTML20UM18R010T1AG | Microsemi Corporation | MOSFET N-CH 200V 109A SP1 | - | 0 | Details |