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1N3595US

DIODE GEN PURP 4A B-MELF
Home › Product Categories › Discrete Semiconductor › Diodes - Rectifiers - Single › 1N3595US
1N3595US P1
1N3595US P1
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See Product Specifications for product details.

Microsemi Corporation ~ 1N3595US

Part Number
1N3595US
Manufacturer
Microsemi Corporation
Description
DIODE GEN PURP 4A B-MELF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- 1N3595US PDF online browsing
Family
Diodes - Rectifiers - Single
  • In Stock : 93 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number 1N3595US
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) -
Current - Average Rectified (Io) 4A (DC)
Voltage - Forward (Vf) (Max) @ If 1V @ 200mA
Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 3µs
Current - Reverse Leakage @ Vr 1nA @ 125V
Capacitance @ Vr, F -
Mounting Type Surface Mount
Package / Case SQ-MELF, B
Supplier Device Package B, SQ-MELF
Operating Temperature - Junction -65°C ~ 150°C

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