IPI120N04S401AKSA1

MOSFET N-CH 40V 120A TO262-3-1
IPI120N04S401AKSA1 P1
IPI120N04S401AKSA1 P2
IPI120N04S401AKSA1 P3
IPI120N04S401AKSA1 P1
IPI120N04S401AKSA1 P2
IPI120N04S401AKSA1 P3
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Infineon Technologies ~ IPI120N04S401AKSA1

Part Number
IPI120N04S401AKSA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 40V 120A TO262-3-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IPI120N04S401AKSA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPI120N04S401AKSA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 176nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 188W (Tc)
Rds On (Max) @ Id, Vgs 1.9 mOhm @ 100A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

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