IPA80R1K2P7XKSA1

MOSFET N-CH 800V COOLMOS TO220-3
IPA80R1K2P7XKSA1 P1
IPA80R1K2P7XKSA1 P1
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Infineon Technologies ~ IPA80R1K2P7XKSA1

Part Number
IPA80R1K2P7XKSA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 800V COOLMOS TO220-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IPA80R1K2P7XKSA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPA80R1K2P7XKSA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Rds On (Max) @ Id, Vgs -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Pack
Package / Case TO-220-3 Full Pack

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