AOT8N65_001

MOSFET N-CH 650V 8A TO220
AOT8N65_001 P1
AOT8N65_001 P1
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Alpha & Omega Semiconductor Inc. ~ AOT8N65_001

Part Number
AOT8N65_001
Manufacturer
Alpha & Omega Semiconductor Inc.
Description
MOSFET N-CH 650V 8A TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
AOT8N65_001.pdf AOT8N65_001 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number AOT8N65_001
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Rds On (Max) @ Id, Vgs 1.15 Ohm @ 4A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3

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