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| Número de pieza | VS-GA100NA60UP |
|---|---|
| Estado de la pieza | Obsolete |
| Tipo de IGBT | - |
| Configuración | Single |
| Voltaje: ruptura del emisor del colector (máximo) | 600V |
| Current - Collector (Ic) (Max) | 100A |
| Potencia - Max | 250W |
| Vce (on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Corriente - corte de colector (máximo) | 250µA |
| Capacitancia de entrada (Cies) @ Vce | 7.4nF @ 30V |
| Entrada | Standard |
| Termistor NTC | No |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | SOT-227-4, miniBLOC |
| Paquete de dispositivo del proveedor | SOT-227 |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
|
VS-GA100NA60UP | Vishay Semiconductor Diodes Division | IGBT 600V 100A 250W SOT-227 | 0 | Detalles | |
|
VS-GA100TS120UPBF | Vishay Semiconductor Diodes Division | IGBT 1200V 182A 520W INT-A-PAK | 0 | Detalles | |
|
VS-GA100TS60SF | Vishay Semiconductor Diodes Division | IGBT 600V 220A 780W | - | 0 | Detalles |
|
VS-GA100TS60SFPBF | Vishay Semiconductor Diodes Division | IGBT 600V 220A 780W INT-A-PAK | - | 0 | Detalles |
|
VS-GA200HS60S1 | Vishay Semiconductor Diodes Division | IGBT 600V 480A 830W | - | 0 | Detalles |
|
VS-GA200HS60S1PBF | Vishay Semiconductor Diodes Division | IGBT 600V 480A 830W INT-A-PAK | - | 0 | Detalles |
|
VS-GA200SA60SP | Vishay Semiconductor Diodes Division | MODULE IGBT SOT-227 | 0 | Detalles | |
|
VS-GA200SA60UP | Vishay Semiconductor Diodes Division | IGBT 600V 200A 500W SOT-227 | - | 128 | Detalles |
|
VS-GA200TH60S | Vishay Semiconductor Diodes Division | IGBT 600V 260A 1042W INT-A-PAK | - | 0 | Detalles |
 |
VS-GA250SA60S | Vishay Semiconductor Diodes Division | IGBT 600V 400A SOT227 | - | 161 | Detalles |
|
VS-GA300TD60S | Vishay Semiconductor Diodes Division | IGBT 600V 530A 1136W INT-A-PAK | - | 0 | Detalles |
|
VS-GA400TD60S | Vishay Semiconductor Diodes Division | IGBT 600V 750A 1563W INT-A-PAK | - | 0 | Detalles |