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Ver especificaciones del producto para detalles del producto.
| Número de pieza | 1N4150W-G3-08 |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 50V |
| Corriente - promedio rectificado (Io) | 200mA |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1V @ 200mA |
| Velocidad | Small Signal =< 200mA (Io), Any Speed |
| Tiempo de recuperación inversa (trr) | 4ns |
| Current - Reverse Leakage @ Vr | 100nA @ 50V |
| Capacitancia @ Vr, F | 2.5pF @ 0V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | SOD-123 |
| Paquete de dispositivo del proveedor | SOD-123 |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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1N4150 | Fairchild/ON Semiconductor | DIODE GEN PURP 50V 200MA DO35 | 0 | Detalles | |
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1N4150 TR | Central Semiconductor Corp | DIODE GEN PURP 50V 200MA DO35 | - | 20000 | Detalles |
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1N4150-1 | Microsemi Corporation | DIODE GEN PURP 50V 200MA DO35 | - | 829 | Detalles |
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1N4150TAP | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 150MA DO35 | - | 0 | Detalles |
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1N4150TR | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 300MA DO35 | - | 0 | Detalles |
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1N4150TR_S00Z | ON Semiconductor | DIODE GEN PURP 50V 200MA DO35 | - | 10006 | Detalles |
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1N4150UR-1 | Microsemi Corporation | DIODE GEN PURP 50V 200MA DO213AA | - | 75 | Detalles |
|
1N4150UR-1/TR | Microsemi Corporation | SWITCHING | - | 32 | Detalles |
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1N4150W-E3-08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 200MA SOD123 | - | 25073 | Detalles |
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1N4150W-E3-18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 200MA SOD123 | - | 20000 | Detalles |
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1N4150W-G3-08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 200MA SOD123 | - | 0 | Detalles |
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1N4150W-G3-18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 200MA SOD123 | - | 0 | Detalles |