Images are for reference only.
See Product Specifications for product details.
| Part Number | VS-GA200TH60S |
|---|---|
| Part Status | Active |
| IGBT Type | - |
| Configuration | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 260A |
| Power - Max | 1042W |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 200A (Typ) |
| Current - Collector Cutoff (Max) | 5µA |
| Input Capacitance (Cies) @ Vce | 13.1nF @ 25V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Double INT-A-PAK (3 + 4) |
| Supplier Device Package | Double INT-A-PAK |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
VS-GA100NA60UP | Vishay Semiconductor Diodes Division | IGBT 600V 100A 250W SOT-227 | 0 | Details | |
|
VS-GA100TS120UPBF | Vishay Semiconductor Diodes Division | IGBT 1200V 182A 520W INT-A-PAK | 0 | Details | |
|
VS-GA100TS60SF | Vishay Semiconductor Diodes Division | IGBT 600V 220A 780W | - | 0 | Details |
|
VS-GA100TS60SFPBF | Vishay Semiconductor Diodes Division | IGBT 600V 220A 780W INT-A-PAK | - | 0 | Details |
|
VS-GA200HS60S1 | Vishay Semiconductor Diodes Division | IGBT 600V 480A 830W | - | 0 | Details |
|
VS-GA200HS60S1PBF | Vishay Semiconductor Diodes Division | IGBT 600V 480A 830W INT-A-PAK | - | 0 | Details |
|
VS-GA200SA60SP | Vishay Semiconductor Diodes Division | MODULE IGBT SOT-227 | 0 | Details | |
|
VS-GA200SA60UP | Vishay Semiconductor Diodes Division | IGBT 600V 200A 500W SOT-227 | - | 128 | Details |
|
VS-GA200TH60S | Vishay Semiconductor Diodes Division | IGBT 600V 260A 1042W INT-A-PAK | - | 0 | Details |
 |
VS-GA250SA60S | Vishay Semiconductor Diodes Division | IGBT 600V 400A SOT227 | - | 161 | Details |
|
VS-GA300TD60S | Vishay Semiconductor Diodes Division | IGBT 600V 530A 1136W INT-A-PAK | - | 0 | Details |
|
VS-GA400TD60S | Vishay Semiconductor Diodes Division | IGBT 600V 750A 1563W INT-A-PAK | - | 0 | Details |