SISH101DN-T1-GE3

MOSFET P-CH 30V POWERPAK 1212
SISH101DN-T1-GE3 P1
SISH101DN-T1-GE3 P1
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Vishay Siliconix ~ SISH101DN-T1-GE3

Part Number
SISH101DN-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 30V POWERPAK 1212
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SISH101DN-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 199256 pcs
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Product Parameter

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Part Number SISH101DN-T1-GE3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 16.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.2 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 3595pF @ 15V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH

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