Images are for reference only.
See Product Specifications for product details.
| Part Number | SISH108DN-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.9 mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8SH |
| Package / Case | PowerPAK® 1212-8SH |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
SISH101DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V POWERPAK 1212 | - | 199256 | Details |
|
SISH106DN-T1-GE3 | Vishay Siliconix | MOSFET N-CHAN PPAK 1212-8SH | - | 80964 | Details |
|
SISH108DN-T1-GE3 | Vishay Siliconix | MOSFET N-CHAN 20 V POWERPAK 1212 | - | 327825 | Details |