SIA950DJ-T1-GE3

MOSFET 2N-CH 190V 0.95A SC-70-6
SIA950DJ-T1-GE3 P1
SIA950DJ-T1-GE3 P1
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Vishay Siliconix ~ SIA950DJ-T1-GE3

Part Number
SIA950DJ-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET 2N-CH 190V 0.95A SC-70-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SIA950DJ-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number SIA950DJ-T1-GE3
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 190V
Current - Continuous Drain (Id) @ 25°C 950mA
Rds On (Max) @ Id, Vgs 3.8 Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 90pF @ 100V
Power - Max 7W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual

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