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See Product Specifications for product details.
| Part Number | TPN1110ENH,L1Q |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 39W (Tc) |
| Rds On (Max) @ Id, Vgs | 114 mOhm @ 3.6A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Package / Case | 8-PowerVDFN |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
TPN11003NL,LQ | Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | - | 0 | Details |
 |
TPN11006NL,LQ | Toshiba Semiconductor and Storage | MOSFET N-CH 60V 17A 8TSON | - | 3000 | Details |
 |
TPN1110ENH,L1Q | Toshiba Semiconductor and Storage | MOSFET N-CH 200V 7.2A 8TSON | - | 0 | Details |