Images are for reference only.
See Product Specifications for product details.
| Part Number | TPCF8102(TE85L,F,M |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550pF @ 10V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 3A, 4.5V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | VS-8 (2.9x1.5) |
| Package / Case | 8-SMD, Flat Lead |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
TPCF8101(TE85L,F,M | Toshiba Semiconductor and Storage | MOSFET P-CH 12V 6A VS-8 | 0 | Details | |
|
TPCF8102(TE85L,F,M | Toshiba Semiconductor and Storage | MOSFET P-CH 20V 6A VS8 2-3U1A | 0 | Details | |
 |
TPCF8104(TE85L,F,M | Toshiba Semiconductor and Storage | MOSFET P-CH 30V 6A VS-8 | 0 | Details | |
 |
TPCF8107,LF | Toshiba Semiconductor and Storage | MOSFET P-CH 30V 6A VS-8 | - | 435 | Details |