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See Product Specifications for product details.
| Part Number | TJ8S06M3L(T6L1,NQ) |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 10V |
| Vgs (Max) | +10V, -20V |
| FET Feature | - |
| Power Dissipation (Max) | 27W (Tc) |
| Rds On (Max) @ Id, Vgs | 104 mOhm @ 4A, 10V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK+ |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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TJ8S06M3L(T6L1,NQ) | Toshiba Semiconductor and Storage | MOSFET P-CH 60V 8A DPAK-3 | - | 0 | Details |