ZDS020N60TB

MOSFET N-CH 600V 8SOIC
ZDS020N60TB P1
ZDS020N60TB P2
ZDS020N60TB P1
ZDS020N60TB P2
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Rohm Semiconductor ~ ZDS020N60TB

Part Number
ZDS020N60TB
Manufacturer
Rohm Semiconductor
Description
MOSFET N-CH 600V 8SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
ZDS020N60TB.pdf ZDS020N60TB PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number ZDS020N60TB
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 630mA (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 10V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 2W (Tc)
Rds On (Max) @ Id, Vgs 5 Ohm @ 500mA, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width)

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