EMD30T2R

TRANS NPN/PNP PREBIAS 0.15W EMT6
EMD30T2R P1
EMD30T2R P1
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Rohm Semiconductor ~ EMD30T2R

Part Number
EMD30T2R
Manufacturer
Rohm Semiconductor
Description
TRANS NPN/PNP PREBIAS 0.15W EMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- EMD30T2R PDF online browsing
Family
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
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Product Parameter

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Part Number EMD30T2R
Part Status Not For New Designs
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA, 200mA
Voltage - Collector Emitter Breakdown (Max) 50V, 30V
Resistor - Base (R1) (Ohms) 10k, 1k
Resistor - Emitter Base (R2) (Ohms) 10k
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V / 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz, 260MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6

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