NTMSD3P102R2SG

MOSFET P-CH 20V 2.34A 8-SOIC
NTMSD3P102R2SG P1
NTMSD3P102R2SG P1
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ON Semiconductor ~ NTMSD3P102R2SG

Part Number
NTMSD3P102R2SG
Manufacturer
ON Semiconductor
Description
MOSFET P-CH 20V 2.34A 8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NTMSD3P102R2SG PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number NTMSD3P102R2SG
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.34A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V
Vgs (Max) ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 730mW (Ta)
Rds On (Max) @ Id, Vgs 85 mOhm @ 3.05A, 10V
Operating Temperature -
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)

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