NTMSD6N303R2G

MOSFET N-CH 30V 6A 8-SOIC
NTMSD6N303R2G P1
NTMSD6N303R2G P1
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ON Semiconductor ~ NTMSD6N303R2G

Part Number
NTMSD6N303R2G
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 30V 6A 8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NTMSD6N303R2G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number NTMSD6N303R2G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 24V
Vgs (Max) ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta)
Rds On (Max) @ Id, Vgs 32 mOhm @ 6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)

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