NTHS2101PT1G

MOSFET P-CH 8V 5.4A CHIPFET
NTHS2101PT1G P1
NTHS2101PT1G P1
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ON Semiconductor ~ NTHS2101PT1G

Part Number
NTHS2101PT1G
Manufacturer
ON Semiconductor
Description
MOSFET P-CH 8V 5.4A CHIPFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
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Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number NTHS2101PT1G
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tj)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 6.4V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Rds On (Max) @ Id, Vgs 25 mOhm @ 5.4A, 4.5V
Operating Temperature -
Mounting Type Surface Mount
Supplier Device Package ChipFET™
Package / Case 8-SMD, Flat Lead

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